JPS531465A - Manufacturer for semiconductor mono crystal thin film and its manufacturing unit - Google Patents

Manufacturer for semiconductor mono crystal thin film and its manufacturing unit

Info

Publication number
JPS531465A
JPS531465A JP7568476A JP7568476A JPS531465A JP S531465 A JPS531465 A JP S531465A JP 7568476 A JP7568476 A JP 7568476A JP 7568476 A JP7568476 A JP 7568476A JP S531465 A JPS531465 A JP S531465A
Authority
JP
Japan
Prior art keywords
thin film
manufacturer
crystal thin
manufacturing unit
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7568476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5645290B2 (en]
Inventor
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7568476A priority Critical patent/JPS531465A/ja
Publication of JPS531465A publication Critical patent/JPS531465A/ja
Publication of JPS5645290B2 publication Critical patent/JPS5645290B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP7568476A 1976-06-25 1976-06-25 Manufacturer for semiconductor mono crystal thin film and its manufacturing unit Granted JPS531465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7568476A JPS531465A (en) 1976-06-25 1976-06-25 Manufacturer for semiconductor mono crystal thin film and its manufacturing unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7568476A JPS531465A (en) 1976-06-25 1976-06-25 Manufacturer for semiconductor mono crystal thin film and its manufacturing unit

Publications (2)

Publication Number Publication Date
JPS531465A true JPS531465A (en) 1978-01-09
JPS5645290B2 JPS5645290B2 (en]) 1981-10-26

Family

ID=13583254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7568476A Granted JPS531465A (en) 1976-06-25 1976-06-25 Manufacturer for semiconductor mono crystal thin film and its manufacturing unit

Country Status (1)

Country Link
JP (1) JPS531465A (en])

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595380A (en) * 1979-01-11 1980-07-19 Stork Brabant Bv Method of and device for sputtering photoconductive material on flexible substrate member
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
JPS5681922A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS5895550A (ja) * 1982-11-01 1983-06-07 Shunpei Yamazaki 非単結晶半導体層形成用装置
JPS6366923A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 連続式半導体被膜形成装置
JPS6366922A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 半導体装置作製方法
JPS63177416A (ja) * 1987-09-12 1988-07-21 Shunpei Yamazaki 被膜形成用装置
JPS63177417A (ja) * 1987-09-12 1988-07-21 Shunpei Yamazaki 被膜形成用装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595380A (en) * 1979-01-11 1980-07-19 Stork Brabant Bv Method of and device for sputtering photoconductive material on flexible substrate member
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
JPS5681922A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS5895550A (ja) * 1982-11-01 1983-06-07 Shunpei Yamazaki 非単結晶半導体層形成用装置
JPS6366923A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 連続式半導体被膜形成装置
JPS6366922A (ja) * 1987-03-20 1988-03-25 Shunpei Yamazaki 半導体装置作製方法
JPS63177416A (ja) * 1987-09-12 1988-07-21 Shunpei Yamazaki 被膜形成用装置
JPS63177417A (ja) * 1987-09-12 1988-07-21 Shunpei Yamazaki 被膜形成用装置

Also Published As

Publication number Publication date
JPS5645290B2 (en]) 1981-10-26

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